features ? moskey tm - mosfet and schottky in a single package ? ultra low on-resistance ? 175c operating temperature ? increased unclamped inductive switching (uis) capability ? hermetically sealed, surface mount power package ? low package inductance ? very low thermal resistance ? reverse polarity available upon request (MSAER57N10Ar) ? available with tx/txv-level screening (MSAER57N10Av) or s-level screening (MSAER57N10As) i.a.w. microsemi internal procedure, ps11.50 MSAER57N10A 100 volts 57 amps 25 m ? 2830 s. fairview st. santa ana, ca 92704 ph: (714) 979-8220 fax: (714) 966-5256 n-channel enhancement mode power mosfet + schottky maximum ratings @ 25 c (unless otherwise specified) description symbol max. unit drain-to-source breakdown voltage (gate shorted to source) @ t j 25 c bv dss 100 volts continuous gate-to-source voltage v gs +/-20 volts continuous drain current tj= 25 c tj= 100 c i d25 i d100 57 40 amps peak drain current, pulse width limited by t jmax i dm 180 amps repetitive avalanche current i ar 28 amps repetitive avalanche energy e ar 15 mj single pulse avalanche energy e as 200 mj voltage rate of change of the recovery diode @ i s i dm , di/dt 100 a/ s, v dd v dss , t j 150 c dv/dt 5.0 v/ns power dissipation @ t c = 100 c p d 215 watts junction temperature range t j -55 to +175 c storage temperature range t stg -55 to +175 c continuous source current (body diode) i s 57 amps pulse source current (body diode) i sm 360 amps thermal resistance, junction to case jc 0.7 c/w mechanical outlinecoolpack tm 1 note: pin-out shown for standard polarity gate source drain revision 1 downloaded from: http:///
revision 1 MSAER57N10A electrical parameters @ 25 c (unless otherwise specified) description symbol conditions min typ. max unit drain-to-source breakdown voltage (gate shorted to source) bv dss v gs = 0 v, i d = 250 a 100 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 ua 2.0 4.0 v gate-to-source leakage current i gss v gs = 20v dc , v ds = 0 t j = 25 c t j = 125 c 100 200 na drain-to-source leakage current (zero gate voltage drain current) i dss v ds = 100 v, v gs = 0 v,t j = 25 c v ds = 80 v, v gs = 0 v, t j = 125 c 25 15 a ma static drain-to-source on-state resistance (1) r ds(on) v gs = 10v, i d = 28 a 0.022 0.025 ? forward transconductance (1) g fs v ds 15 v; i d = 28 a 20 - s input capacitance output capacitance reverse transfer capacitance c iss c oss c rss v gs = 0 v, v ds = 25 v, f = 1 mhz 3100 1150 300 pf turn-on delay time rise time turn-off delay time fall time t d(on) t r t d(off) t f v gs = 10 v, v ds = 50 v, i d = 28 a, r g = 2.5 ? 14 59 58 48 ns total gate charge gate-to-source charge gate-to-drain (miller) charge q g(on) q gs q gd v gs = 10 v, v ds = 80v, i d = 28a 115 10 66 nc body diode forward voltage (1) v sd i s = 28a, v gs = 0 v 0.8 0.87 v body diode typical forward voltage 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0 1 02 03 04 05 06 0 isd (a) vsd (v) tj=25c notes (1) pulse test, t 300 s, duty cycle 2% (2) microsemi corp. does not manufacture the mosfet die; contact company for details. downloaded from: http:///
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